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RJK6014DPK
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1517-0200 Rev.2.00 Jun 04, 2007
Features
* Low on-resistance * Low leakage current * High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 600 30 16 32 16 32 5 1.3 150 0.833 150 -55 to +150 Unit V V A A A A A mJ W C/W C C
REJ03G1517-0200 Rev.2.00 Jun 04, 2007 Page 1 of 6
RJK6014DPK
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 600 -- -- 3.0 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 0.475 1800 170 20 36 29 93 20 45 9 20 0.91 390 Max -- 1 0.1 4.5 0.575 -- -- -- -- -- -- -- -- -- -- 1.50 -- Unit V A A V pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 8 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 8 A VGS = 10 V RL = 37.5 Rg = 10 VDD = 480 V VGS = 10 V ID = 16 A IF = 16 A, VGS = 0 Note4 IF = 16 A, VGS = 0 diF/dt = 100 A/s
REJ03G1517-0200 Rev.2.00 Jun 04, 2007 Page 2 of 6
RJK6014DPK
Main Characteristics
Power vs. Temperature Derating
400 1000
Ta = 25C
Maximum Safe Operation Area
Pch (W)
300
ID (A)
100 10 1 0.1
DC Operation (Tc = 25C)
10
10
0
s
Channel Dissipation
s
s 1m
200
100
Drain Current
0.01 Operation in this 0.001 0.1
area is limited by RDS(on)
PW = 10 ms (1shot)
0
50
100
150
200
1
10
100
1000
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
20 7V 10 V Pulse Test 12 5.6 V 6V 100 50 5.8 V
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
ID (A) Drain Current
16
20 10 5 2 1 0.5 0.2 Tc = 75C 25C -25C 0 2 4 6 8 10 0.1
Drain Current
8
5.4 V 5.2 V
4
VGS = 5 V
0 4 8 12 16 20
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source on State Resistance RDS(on) ()
1 VGS = 10 V 0.5
Static Drain to Source on State Resistance RDS(on) ()
Static Drain to Source on State Resistance vs. Drain Current
Static Drain to Source on State Resistance vs. Temperature
2.0 VGS = 10 V
1.6 ID = 8 A
0.2 0.1 0.05
1.2
0.8 4A 0.4 Pulse Test 0 -25 0 25 50 75 100 125 150
0.02 0.01 1 3 10 30 Pulse Test 100 300 1000
Drain Current
ID (A)
Case Temperature
Tc (C)
REJ03G1517-0200 Rev.2.00 Jun 04, 2007 Page 3 of 6
RJK6014DPK
Body-Drain Diode Reverse Recovery Time
1000 10000 3000 Ciss
Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
500 200 100 50 20 10 5 2 1 1 3 10 30 100 300 1000 di / dt = 100 A / s VGS = 0, Ta = 25C
Capacitance C (pF)
1000 300 100 30 10 3 1 0 VGS = 0 f = 1 MHz 100 200 300 Crss Coss
Reverse Drain Current
IDR (A)
Drain to Source Voltage
VDS (V)
Dynamic Input Characteristics
VDS (V) VGS (V)
800
Reverse Drain Current vs. Source to Drain Voltage
16 20
IDR (A)
ID = 16 A VDD = 100 V 300 V 480 V
VGS
Pulse Test 16
600 VDS 400
12
Drain to Source Voltage
Gate to Source Voltage
Reverse Drain Current
12
8
8 4
200
VDD = 480 V 300 V 100 V 12 24 36 48
4
5 V, 10 V
VGS = 0 V, -5 V 0.8 1.2 1.6 2.0
0 0 60
0
0.4
Gate Charge
Qg (nC)
Source to Drain Voltage
VSD (V)
Gate to Source Cutoff Voltage vs. Case Temperature
5
Gate to Source Cutoff Voltage VGS(off) (V)
4
ID = 10 mA
3 1 mA 2 0.1 mA
1 VDS = 10 V 0 -25 0 25
50
75
100 125 150
Case Temperature
Tc (C)
REJ03G1517-0200 Rev.2.00 Jun 04, 2007 Page 4 of 6
RJK6014DPK
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3
Tc = 25C
1
D=1 0.5
0.3
0.2
0.1
0.1
0.05
ch - c (t) = s (t) * ch - c ch - c = 0.833C/W, Tc = 25C PDM
D=
PW T
0.03
0.02 1 0.0
PW T
0.01 10
1s
t ho
pu
lse
100
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor D.U.T. RL 10 Vin 10 V VDD = 300 V Vin Vout 10% 10% Vout Monitor
Waveform
90%
10%
90% td(on) tr
90% td(off) tf
REJ03G1517-0200 Rev.2.00 Jun 04, 2007 Page 5 of 6
RJK6014DPK
Package Dimensions
Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
1.5
15.6 0.3
4.8 0.2
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part No. RJK6014DPK-00-T0 Quantity 360 pcs Box (Tube) Shipping Container
REJ03G1517-0200 Rev.2.00 Jun 04, 2007 Page 6 of 6
0.3
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. 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Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. 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RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
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(c) 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.0

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